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MJD5731

Inchange Semiconductor
Part Number MJD5731
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Oct 17, 2016
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -350V(Min) ·High Swit...
Datasheet PDF File MJD5731 PDF File

MJD5731
MJD5731

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -350V(Min) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier SWITCHMODE power supply drivers and other switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO VEBO IC ICM PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature -350 V -5 V -1.
0 A -3.
0 A 15 W 1.
56 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 8.
33 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W MJD5731 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transist...


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