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MJD5731

ON
Part Number MJD5731
Manufacturer ON
Description High Voltage PNP Silicon Power Transistors
Published May 7, 2005
Detailed Description MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power ...
Datasheet PDF File MJD5731 PDF File

MJD5731
MJD5731

Overview
MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.
Features • PNP Complements to the MJD47 thru MJD50 Series • Epoxy Meets UL 94 V−0 @ 0.
125 in • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Total Power Dissipation @ TC = 25°C Derate above 25°C Symbol VCEO VEB IC ICM PD Max 350 5 1.
0 3.
0 15 0.
12 Unit Vdc Vdc Adc Adc W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.
56 W 0.
0125 W/°C Unclamped Inductive Load Energy (See Figure 10) E 20 mJ Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recomm...


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