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CJ3407

Part Number	CJ3407
Manufacturer	JCST
Description	MOSFETS
Published	Oct 20, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode...
Datasheet	CJ3407 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode Field Effect Transistor General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge.
This device is suitable for use as a load switch or in PWM applications.
MARKING: 3407 SOT-23 1.
GATE 2.
SOURCE 3.
DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA TJ Tstg Value -30 ±20 -4.
1 350 357 150 -55~+150 Unit V V A mW...

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