DatasheetsPDF.com

MTBA6C15H8

CYStech Electronics
Part Number MTBA6C15H8
Manufacturer CYStech Electronics
Description P- & N-Channel Enhancement Mode Power MOSFET
Published Oct 26, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C938H8 Issued Date : 2016.09.06 Revised Date : 2018.04.16 Page No. : 1/14 N- And...
Datasheet PDF File MTBA6C15H8 PDF File

MTBA6C15H8
MTBA6C15H8

Overview
CYStech Electronics Corp.
Spec.
No.
: C938H8 Issued Date : 2016.
09.
06 Revised Date : 2018.
04.
16 Page No.
: 1/14 N- And P-Channel Enhancement Mode MOSFET MTBA6C15H8 BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.
5V(-4.
5V) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package N-CH 150V 2.
4A 6.
8A 172mΩ 178mΩ P-CH -150V -2.
0A -5.
8A 257mΩ 275mΩ Equivalent Circuit MTBA6C15H8 Outline Pin 1 DFN5×6 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTBA6C15H8-0-T6-G Package Shipping DFN 5 ×6 (Pb-free lead plating & halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTBA6C15H8 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C938H8 Issued Date : 2016.
09.
06 Revised Date : 2018.
04.
16 Page No.
: 2/14 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage TA=25 °C, VGS=10V (-10V) Continuous Drain Current TA=70 °C, VGS=10V (-10V) TC=25 °C, VGS=10V (-10V) TC=100 °C, VGS=10V (-10V) Pulsed Drain Current (Note 1 & 2) TA=25 °C Power Dissipation TA=70 °C TC=25 °C TC=100 °C Operating Junction and Storage Temperature Range Symbol BVDSS VGS IDSM ID IDM PDSM PD Tj; Tstg Limits N-channel P-channel 150 -150 ±20 ±20 2.
4 -2.
0 1.
9 -1.
6 6.
8 -5.
8 4.
3 -3.
7 10 -8 2.
5 (Note 3) 1.
6 (Note 3) 21 8.
4 -55~+150 Unit V A W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Note : 1.
Pulse width limited by maximum junction temperature 2.
Duty cycle≤1% RθJC RθJA 6 50 (Note 3) °C/W 3.
Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum co...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)