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MTBA6C15J4

CYStech
Part Number MTBA6C15J4
Manufacturer CYStech
Description N & P-Channel Enhancement Mode Power MOSFET
Published Apr 28, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C938J4 Issued Date : 2014.10.15 Revised Date : 2017.07.25 Page No. : 1/13 N & P-...
Datasheet PDF File MTBA6C15J4 PDF File

MTBA6C15J4
MTBA6C15J4

Overview
CYStech Electronics Corp.
Spec.
No.
: C938J4 Issued Date : 2014.
10.
15 Revised Date : 2017.
07.
25 Page No.
: 1/13 N & P-Channel Enhancement Mode Power MOSFET MTBA6C15J4 BVDSS ID @VGS=10V(-10V), TA=25°C Features • Low gate charge • Simple drive requirement • Pb-free lead plating and halogen-free package ID @VGS=10V(-10V), TC=25°C RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=4.
5V(-4.
5V) N-CH 150V 2A 9.
3A 167mΩ 172mΩ P-CH -150V -1.
5A -7.
1A 253mΩ 273mΩ Equivalent Circuit MTBA6C15J4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Voltage VDS 150 -150 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1) Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1) ID 9.
3 6.
6 -7.
1 -5.
0 Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note2) Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note2) IDSM 2 1.
7 -1.
5 -1.
3 Pulsed Dr...


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