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MSC8205G

Part Number	MSC8205G
Manufacturer	MORESEMI
Description	Dual N-Channel Enhancement Mode Power MOS FET
Published	Oct 29, 2016
Detailed Description	MSC8205G 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ ...
Datasheet	MSC8205G PDF File

Overview

MSC8205G 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.
5V RDS(ON) < 27mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Lead Free Application ●Battery protection ●Load switch ●Power management PIN Configuration Marking and pin assignment TSSOP-8 top view D1 G1 G2 D2 S1 S2 Schematic diagram Package Marking And Ordering Information Device Marking Device Device Package MSC8205G TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±10 6 25 1.
5 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junctio...

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