DatasheetsPDF.com

MSC82005

Part Number	MSC82005
Manufacturer	STMicroelectronics
Description	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Published	Jul 6, 2007
Detailed Description	MSC82005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . EMITTER BALLASTED VSWR CAPABILITY...
Datasheet	MSC82005 PDF File

Overview

MSC82005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS .
.
.
.
.
EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC ® PACKAGE P OUT = 5.
0 W MIN.
WITH 7.
0 dB GAIN @ 2.
0 GHz .
250 2LFL (S010) hermetically sealed ORDER CODE MSC82005 BRANDING 82005 PIN CONNECTION www.
DataSheet4U.
com DESCRIPTION The MSC82005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system.
This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions.
The MSC82005 was designed for Class C amplif...

Similar Datasheet

MSC82001 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS - STMicroelectronics
MSC82003 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS - STMicroelectronics
MSC82005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS - STMicroelectronics
MSC82010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS - STMicroelectronics
MSC82040 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS - STMicroelectronics
MSC8205G Dual N-Channel Enhancement Mode Power MOS FET - MORESEMI
MSC8205S Dual N-Channel Enhancement Mode Power MOS FET - MORESEMI

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)