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SST12LP17E

Microchip
Part Number SST12LP17E
Manufacturer Microchip
Description High-Gain Power Amplifier Module
Published Nov 11, 2016
Detailed Description 2.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP17E Data Sheet SST12LP17E is a 2.4 GHz high-efficiency...
Datasheet PDF File SST12LP17E PDF File

SST12LP17E
SST12LP17E

Overview
2.
4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP17E Data Sheet SST12LP17E is a 2.
4 GHz high-efficiency, fully-matched power amplifier module based on the highly-reliable InGaP/GaAs HBT technology.
It is designed in compliance with IEEE 802.
11b/g/n applications and typically provides 28 dB gain with 28% power-added efficiency at 21dBm.
SST12LP17E has excellent linearity, providing 3% EVM at typically 18 dBm, while meeting 802.
11g spectrum mask at 21.
5 dBm.
This power amplifier requires no external RF matching, and only requires one external DC-bias capacitor to meet the specified performance.
It offers high-speed power-up/-down control through a single reference voltage pin and includes a temperature-stable, VSWR insensitive power detector voltage output.
SST12LP17E is offered in a super-thin (0.
4mm maximum) 8-contact X2SON package and a 8-contact USON package.
Features • Input/Output ports internally matched to 50 and DC decoupled • High gain: – Typically 28...


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