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SST12LP14C

Silicon Storage Technology
Part Number SST12LP14C
Manufacturer Silicon Storage Technology
Description High-Gain Power Amplifier
Published Jul 15, 2009
Detailed Description 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C SST-GP1214A2.4 GHz High Gain High Power PA Preliminary Specifi...
Datasheet PDF File SST12LP14C PDF File

SST12LP14C
SST12LP14C

Overview
2.
4 GHz High-Power, High-Gain Power Amplifier SST12LP14C SST-GP1214A2.
4 GHz High Gain High Power PA Preliminary Specifications FEATURES: • High Gain: – Typically 32 dB gain across 2.
4~2.
5 GHz over temperature 0°C to +85°C High linear output power: – >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 4 – Meets 802.
11g OFDM ACPR requirement up to 23 dBm – ~4% added EVM up to 20 dBm for 54 Mbps 802.
11g signal – Meets 802.
11b ACPR requirement up to 22.
5 dBm High power-added efficiency/Low operating current for both 802.
11b/g applications – ~29%/205 mA @ POUT = 23 dBm for 802.
11g – ~27%/195 mA @ POUT = 22.
5 dBm for 802.
11b Single-pin low IREF power-up/-down control – IREF <2 mA Low idle current – ~100 mA ICQ High-speed power-up/-down – Turn on/off time (10%- 90%) <100 ns – Typical power-up/-down delay with driver delay included <200 ns • High temperature stability – ~1 dB power variation between 0°C to +85°C • Low shut-down current (< 0.
1 µA) • Excellent On-chip power detection – <+/- 0.
5dB variation between 0°C to +85°C – <+/- 0.
3dB variation Ch1 through Ch14 • 20 dB dynamic range on-chip power detection • Simple input/output matching • Packages available – 16-contact VQFN – 3mm x 3mm • All non-Pb (lead-free) devices are RoHS compliant • • APPLICATIONS: • • • • WLAN (IEEE 802.
11b/g) Home RF Cordless phones 2.
4 GHz ISM wireless equipment • • • PRODUCT DESCRIPTION The SST12LP14C is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP14C can be easily configured for high-power applications with good power-added efficiency (PAE) while operating over the 2.
4- 2.
5 GHz frequency band.
It typically provides 32 dB gain with 29% PAE @ POUT = 23 dBm for 802.
11g and 27% power-added efficiency @ POUT = 22.
5 dBm for 802.
11b.
This power amplifier has excellent linearity, typically ~4% added EVM at 20 dBm output power.
This is essential for 54 Mbps 802.
11g operation while meeting 802.
11g spectrum mask up to 23 dBm.
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