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KTB1367

Inchange Semiconductor
Part Number KTB1367
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistors
Published Nov 14, 2016
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Collector Po...
Datasheet PDF File KTB1367 PDF File

KTB1367
KTB1367

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -2.
0V(Max)@ (IC= -4A, IB= -0.
4A) ·Complement to Type KTD2059 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.
5 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTB1367 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KTB1367 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION...


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