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KTB1368

GME
Part Number KTB1368
Manufacturer GME
Description PNP Epitaxial Planar Silicon Transistors
Published Aug 31, 2017
Detailed Description PNP Epitaxial Planar Silicon Transistors FEATURES z Good Linearity of hfe. z Complementary to KTD2060 Pb Lead-free Pr...
Datasheet PDF File KTB1368 PDF File

KTB1368
KTB1368


Overview
PNP Epitaxial Planar Silicon Transistors FEATURES z Good Linearity of hfe.
z Complementary to KTD2060 Pb Lead-free Production specification KTB1368 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Tc=25℃ Junction and Storage Temperature -80 V -5 V -4 A -0.
4 A 25 W -55 to +150 ℃ X140 Rev.
A www.
gmicroelec.
com 1 Production specification PNP Epitaxial Planar Silicon Transistors KTB1368 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter Breakdown Voltage V(BR)CEO IC=-50mA,IB=0 -80 V Collector Cut-off Current ICBO VCB=-80V,IE=0 -30 μA Emitter Cut-off Current IEBO VEB=-5V,IC=0 -100 μA DC Current Gain hFE VCE=-5V,IC=-...



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