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BDX34D

Part Number BDX34D
Manufacturer CDIL
Title NPN/PNP PLASTIC POWER TRANSISTORS
Description SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Peak Base Current Device Dissipat...
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BDX34 : BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX34 : BDX34A : BDX34B : BDX34C VCEO Collector-Emitter Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 - 10 - 15 - 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP.

BDX34 : SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD Tj, Tstg Rth(j-c) BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34B BDX34C BDX34D 60 80 100 120 60 80 100 120 5.0 UNIT V V V 10 A 15 A 0.25 A 70 W 0.56 W/ºC -65 to +150 ºC 1.78 ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST BDX33 BDX33A BDX33B BDX33C BDX33D CONDITION BDX34 BDX34A BDX34B BDX34C BDX34D UNIT Breakdown (sus) Voltage Colle.

BDX34 : www.DataSheet4U.com BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D 70 W at 25°C Case Temperature 10 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A B C E TO-220 PACKAGE (TOP VIEW) ● ● ● 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDX34 BDX34A Collector-base voltage (IE = 0) BDX34B BDX34C BDX34D BDX34 BDX34A Collector-emitter voltage (IB = 0) BDX34B BDX34C BDX34D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at .

BDX34 : SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD www.DataSheet.net/ BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34B BDX34C BDX34D 60 80 100 120 60 80 100 120 5.0 10 15 0.25 70 0.56 -65 to +150 UNIT V V V A A A W W/ºC ºC Tj, Tstg Rth(j-c) 1.78 ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST BDX33 BDX33A BDX33B BDX33C BDX33D CONDITION BDX34 BDX34A BDX34B BDX34C BDX34D Breakdown (sus) Voltage VCEO.

BDX34 : PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary NPN types are the BDX33A, BDX33B and BDX33C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Collector-Emitter Voltage Ratings www.DataSheet.net/ Value BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C -45 -60 -80 -100 -45 -60 -80 -100 -10 -15 -0.25 70 -65 to +150 Unit VCEO IB=0 V VCBO Collector-Base Voltage IE=0 IC(RMS) I.

BDX34 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -2.5V(Max.)@ IC= -4A ·Complement to Type BDX33 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current-Continuous PC Collector Power Dissipation @.

BDX34 : BDX33, 34 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C • Monolithic construction with Built-in Base-Emitter shunt resistor. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case) Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres NPN BDX33B BDX33C PNP BDX34B BDX34C 10 Ampere Complementary Silicon Power Transistors 80 - 100 Volts 70 Watts TO-220 Page 1 31/05/05 V1.0 BDX33, 34 Darlington Transi.

BDX34 : ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX33/A/B/C APPLICATIONS ·For power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BDX34 VCBO Collector-base voltage BDX34A BDX34B BDX34C BDX34 VCEO BDX34A Collector-emitter voltage BDX34B BDX34C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal re.

BDX34A : BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX34 : BDX34A : BDX34B : BDX34C VCEO Collector-Emitter Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 - 10 - 15 - 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP.

BDX34A : SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD Tj, Tstg Rth(j-c) BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34B BDX34C BDX34D 60 80 100 120 60 80 100 120 5.0 UNIT V V V 10 A 15 A 0.25 A 70 W 0.56 W/ºC -65 to +150 ºC 1.78 ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST BDX33 BDX33A BDX33B BDX33C BDX33D CONDITION BDX34 BDX34A BDX34B BDX34C BDX34D UNIT Breakdown (sus) Voltage Colle.

BDX34A : SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD www.DataSheet.net/ BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34B BDX34C BDX34D 60 80 100 120 60 80 100 120 5.0 10 15 0.25 70 0.56 -65 to +150 UNIT V V V A A A W W/ºC ºC Tj, Tstg Rth(j-c) 1.78 ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST BDX33 BDX33A BDX33B BDX33C BDX33D CONDITION BDX34 BDX34A BDX34B BDX34C BDX34D Breakdown (sus) Voltage VCEO.

BDX34A : PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX34B, BDX34B and BDX34C are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary NPN types are the BDX33A, BDX33B and BDX33C respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Collector-Emitter Voltage Ratings www.DataSheet.net/ Value BDX34 BDX34A BDX34B BDX34C BDX34 BDX34A BDX34B BDX34C -45 -60 -80 -100 -45 -60 -80 -100 -10 -15 -0.25 70 -65 to +150 Unit VCEO IB=0 V VCBO Collector-Base Voltage IE=0 IC(RMS) I.

BDX34A : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -2.5V(Max.)@ IC= -4A ·Complement to Type BDX33A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current-Continuous PC Collector Power Dissipation .

BDX34A : www.DataSheet4U.com BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device.

BDX34A : ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX33/A/B/C APPLICATIONS ·For power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BDX34 VCBO Collector-base voltage BDX34A BDX34B BDX34C BDX34 VCEO BDX34A Collector-emitter voltage BDX34B BDX34C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal re.

BDX34B : The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature BDX33B BDX34B 80 80 10 15 0.25 70 -65 to.

BDX34B : BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX34 : BDX34A : BDX34B : BDX34C VCEO Collector-Emitter Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 - 10 - 15 - 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP.




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