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2SB962-Z


Part Number 2SB962-Z
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistor
Description ·Low Collector Saturation Voltage : VCE(sat)= -0.3V(Typ)@IC= -2.0A ·PNP silicon epitaxial transistor ·100% avalanche tested ·Minimum Lot-to-Lot va...
Features PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat)NOTE Collector-Emitter Saturation Voltage VBE(sat)NOTE Base-Emitter Saturation Voltage IEBO Emitter Cutoff Current ICBO Collector Cutoff Current hFE1NOTE DC Current Gain hFE2NOTE DC Current Gain IC= -2.0A; IB= -200mA IC= -2.0A; IB= -200mA VE...

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2SB962-Z : SMD Type PNP Transistors 2SB962-Z Transistors ■ Features ● Low collector to emitter saturation voltage VCE(sat). + 1.50 0.15 -0.15 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm 3.80 + 5.55 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.25 2 .6 5 -0.1 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 +0 9.70 .2 -0.2 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector current -Pulse Collector Power Dissipation Junction Temperature Storage Temperature range (Note.1) Symbol Rating Unit .

2SB962-Z : R The 2SB962-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • Low VCE(sat): VCE(sat) = −0.3 V TYP. PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 5.6 ±0.3 9.5 ±0.5 5.5 ±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base voltage VCBO −40 V Collector to Emitter voltage VCEO −30 V Emitter to Base voltage VEBO −5 V Collector Current (DC) IC(DC) −3 A Collector Current (pulse) Note 1 IC(pulse) −6 A Total Power Dissipation (TA = 25°C) Note 2 PT 2.0 W Junction Temperature Tj 150 °C Storage Temperature.




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