DATA SHEET
SILICON POWER TRANSISTOR
2SB962-Z
PNP SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SB962-Z is designed for Audio Frequency Amplifier and
Switching, especially in Hybrid Integrated Circuits.
FEATURES
• Low VCE(sat): VCE(sat) = −0. 3 V TYP.
PACKAGE DRAWING (Unit: mm)
6. 5 ±0. 2 5. 0 ±0. 2 4. 4 ±0. 2
4
Note
1. 5
+0. 2 −0. 1
2. 3 ±0. 2 0. 5 ±0. 1 Note
1. 0 ±0. 5 0. 4 MIN. 0. 5 TYP.
2. 5 ±0. 5
5. 6 ±0. 3 9. 5 ±0. 5
5. 5 ±0. 2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base voltage
VCBO
−40
V
Collector to Emitter voltage
VCEO
−30
V
Emitter to Base voltage
VEBO
−5
V
Collector Current (DC)
IC(DC)
−3
A
Collector Current (pulse) Note 1
IC(pulse)
−6
A
Total Power Dissipation (TA = 25°C) Note 2 PT
2. 0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg −55 to +150 °C
123
2. 3 ±0. 3
0. 5 ±0. 1 2. 3 ±0. 3
0. 5 ±0. 1 0. 15 ±0. 15
TO-252 (MP-3Z)
1. Base 2. Collector 3. Emitter 4. Collector Fin
Note The depth of notch at the top of the fin is from 0 to 0. 2 mm.
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7. 5 cm2 × 0. 7 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18265EJ4V0DS00 (4th edition)
(Previous No. TC-1626B)
Date Published July 2006 NS CP(K) Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
1985, 2006
2SB962-Z
2
Data Sheet D18265EJ4V0DS
2SB962-Z
3
Data Sheet D18265EJ4V0DS
2SB962-Z
• The information in this document is current as of July, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or ...