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3DD102

Part Number	3DD102
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 22, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102 DESCRIPTION ·Collector-Emitte...
Datasheet	3DD102 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.
) ·DC Current Gain- : hFE= 20(Min.
)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
8V(Max)@ IC= 2.
5A APPLICATIONS ·Designed for power amplifier , DC Transform T-Shirt  SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.
0 ℃/W isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 3DD102 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARA...

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