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SPD08P06P

Infineon Technologies
Part Number SPD08P06P
Manufacturer Infineon Technologies
Description SIPMOS Power-Transistor
Published Jun 7, 2005
Detailed Description Preliminary data SPD08P06P SPU08P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-...
Datasheet PDF File SPD08P06P PDF File

SPD08P06P
SPD08P06P

Overview
Preliminary data SPD08P06P SPU08P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.
3 -8.
8 V W · · · · A Type SPD08P06P SPU08P06P Package P-TO252 Ordering Code Q67040-S4153 Pin 1 G PIN 2/4 D PIN 3 S P-TO251-3-1 Q67040-S4154 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -8.
8 -6.
2 Unit A ID T C = 25 °C T C = 100 °C Pulsed drain current ID puls EAS EAR dv/dt -35.
2 70 4.
2 6 kV/µs mJ T C = 25 °C Avalanche energy, single pulse I D = -8.
8 A , VDD = -25 V, R GS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -8.
8 A, V DS = -48 , di/dt = 200 A/µs, T jmax = 175 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 42 -55.
.
.
+175 55/175/56 V W °C T C = 25 °C Operating and storage temp...


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