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IPG20N06S4L-26A

Infineon
Part Number IPG20N06S4L-26A
Manufacturer Infineon
Description Power-Transistor
Published Nov 24, 2016
Detailed Description OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to ...
Datasheet PDF File IPG20N06S4L-26A PDF File

IPG20N06S4L-26A
IPG20N06S4L-26A

Overview
OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPG20N06S4L-26A Product Summary VDS RDS(on),max4) ID 60 V 26 mΩ 20 A PG-TDSON-8-10 Type IPG20N06S4L-26A Package PG-TDSON-8-10 Marking 4N06L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V2) I D,pulse - E AS I AS V GS I D=10A - P tot T C=25 °C Operating and storage temperature T j, T stg - Value 20 18 80 35 15 ±16 33 -55 .
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+175 Unit A mJ A V W °C Rev.
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