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IPG20N06S4L-26

Infineon
Part Number IPG20N06S4L-26
Manufacturer Infineon
Description Power Transistor
Published Oct 5, 2014
Detailed Description IPG20N06S4L-26 OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 60 26 20 V mW A Features • Dual N-...
Datasheet PDF File IPG20N06S4L-26 PDF File

IPG20N06S4L-26
IPG20N06S4L-26

Overview
IPG20N06S4L-26 OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 60 26 20 V mW A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPG20N06S4L-26 Package PG-TDSON-8-4 Marking 4N06L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active Operating and storage temperature I D,pulse E AS I AS V GS P tot T j, T stg I D=10A T C=25 °C Value Unit ID 20 A 18 80 35 15 ±16 33 -55 .
.
.
+175 mJ A V W °C Rev.
1.
0 page 1 2010-10-15 IPG20N06S4L-26 Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current4) V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D= 10µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C2) Gate-source leakage current4) Drain-source on-state resistance4) I GSS R DS(on) V GS=16 V, V DS=0 V V GS=4.
5 V, I D=10 A V GS=10 V, I D=17 A 60 1.
2 1.
7 0.
01 2.
2 1 µA V 100 60 4.
5 K/W - 5 31 21 100 100 46 26 nA mW Rev.
1.
0 page 2 2010-10-15 IPG20N06S4L-26 Parameter Symbol Conditions min.
Values typ.
max.
Unit Dynamic characteristics2) Input capacitance4) Output capacitance4) Reverse transfer capacitance4) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2, 4) Gate to source charge Gate to drain charge Gate...


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