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AUIRF952Q

Infineon
Part Number AUIRF952Q
Manufacturer Infineon
Description Dual N/P-Channel MOSFET
Published Dec 1, 2016
Detailed Description   AUTOMOTIVE GRADE AUIRF9952Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Du...
Datasheet PDF File AUIRF952Q PDF File

AUIRF952Q
AUIRF952Q

Overview
  AUTOMOTIVE GRADE AUIRF9952Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Full Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   S1 N-CHANNEL MOSFET 18 D1 N-CH P-CH G1 2 S2 3 V7 D1 DSS 6 D2 30V -30V G2 4 5 D2 RDS(on) max.
0.
10 0.
25 P-CHANNEL MOSFET Top View ID 3.
5A -2.
3A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8 A...


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