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CS100N03B4

Huajing Microelectronics
Part Number CS100N03B4
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFE...
Datasheet PDF File CS100N03B4 PDF File

CS100N03B4
CS100N03B4

Overview
Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 30 100 100 4.
0 switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-252, which accords with the RoHS standard.
Features： l Trench FET Power MOSFET l Low ON Resistance(Rdson≤5.
3mΩ) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:300pF) l 100% Single Pulse avalanche energy Tes...


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