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CS1N60C1H

Huajing Microelectronics
Part Number CS1N60C1H
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS1N60 C1H ○R General Description： CS1N60 C1H-BD, the silicon N-channel Enhanced VDMOSF...
Datasheet PDF File CS1N60C1H PDF File

CS1N60C1H
CS1N60C1H

Overview
Silicon N-Channel Power MOSFET CS1N60 C1H ○R General Description： CS1N60 C1H-BD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.
0 3 9 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-92, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤10.
5Ω) l Low Gate Charge (Typical Data:6.
0nC) l Low Reverse transfer capacitances(Typical:4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulse...


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