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CS1N60C1HD

Huajing Microelectronics
Part Number CS1N60C1HD
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Jan 30, 2019
Detailed Description Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS1N60C1HD General Description： CS1N60C1HD, the silicon N-c...
Datasheet PDF File CS1N60C1HD PDF File

CS1N60C1HD
CS1N60C1HD

Overview
Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS1N60C1HD General Description： CS1N60C1HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.
5 3 7.
0 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-92, which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.
5nC) l Low Reverse transfer capacitances(Typical:5.
0pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain C...


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