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MRF559

Part Number	MRF559
Manufacturer	Microsemi
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Published	Dec 11, 2016
Detailed Description	140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW ...
Datasheet	MRF559 PDF File

Overview

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 Features • Specified @ 12.
5 V, 870 MHz Characteristics • Output Power = .
5 W • Minimum Gain = 8.
0 dB • Efficiency 50% • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Solderability Macro X DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipation @ TC = 75ºC Derate above 75ºC Storage Temperature Range Value 16 30 3.
0 150 2.
0 20 -65 to +150 Unit Vdc Vdc Vdc mA Watts mW/ ºC ºC MSC1317.
PDF 10-25-99 MRF559 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol Test Conditions BVCEO BVCBO BVEBO ICES (on) HFE Collector-Emitter Breakd...

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