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MRF553

ASI
Part Number MRF553
Manufacturer ASI
Description NPN SILICON RF TRANSISTOR
Published Dec 11, 2016
Detailed Description MRF553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF553 is designed for Low power amplifier applications. FEATURE...
Datasheet PDF File MRF553 PDF File

MRF553
MRF553

Overview
MRF553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF553 is designed for Low power amplifier applications.
FEATURES: • 12.
5 V, 175 MHz.
• POUT = 1.
5 W • GP = 11.
5 min.
• η = 60 % (Typ) MAXIMUM RATINGS IC 500 mA VCB 36 V PDISS 3.
0 W @ TC = 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 41.
7 °C/W PACKAGE STYLE MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.
45 5.
21 .
175 .
205 B 1.
91 2.
54 .
075 .
100 C 0.
84 0.
99 .
033 .
039 D 2.
46 2.
64 .
097 .
104 E 8.
84 9.
73 .
348 .
383 F 0.
20 0.
31 .
008 0.
12 G 7.
24 8.
13 .
285 .
320 H 1.
65 0.
65 J 3.
25 0.
128 K 0.
64 1.
02 .
025 0.
40 1 = COLLECTOR 2 = EMITTER 3 = BASE 4 = EMITTER CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCEO IC = 10 mA BVCBO IC = 5.
0 mA BVCES IC = 5.
0 mA BVEBO IE = 1.
0 mA ICES VCE = 15 V hFE VCE = 5.
0 V IC = 250 mA CCB VCB = 10 V f = 1.
0 MHz GPE VCE = 12 V POUT = 1.
5 W f = 175 MHz η ψ MINIMUM TYPICAL MAXIMUM 16 36 36 4.
0 5.
0 30 200 ...


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