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BSS806NE

Infineon
Part Number BSS806NE
Manufacturer Infineon
Description Small-Signal-Transistor
Published Dec 13, 2016
Detailed Description OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • ESD protect...
Datasheet PDF File BSS806NE PDF File

BSS806NE
BSS806NE

Overview
OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Ultra Logic level (1.
8V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSS806NE Product Summary VDS RDS(on),max ID VGS=2.
5 V VGS=1.
8 V 20 V 57 mW 82 2.
3 A PG-SOT23 3 1 2 Type BSS806NE Package SOT23 Tape and Reel H6327: 3000 pcs/ reel Marking YIs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Halogen Free Yes Packing Non dry Value 2.
3 1.
9 9.
3 Unit A Avalanche energy, single pulse E AS I D=2.
3 A, R GS=25 W 10.
8 mJ Reverse diode dv /dt Gate source voltage Power dissipation1) Operating and storage temperature dv /dt I D=2.
3 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C V GS P tot T A=25 °C T j, T stg ESD Class JESD22-A114 -HBM Sold...


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