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BSS806N

Infineon Technologies
Part Number BSS806N
Manufacturer Infineon Technologies
Description Small-Signal-Transistor
Published May 30, 2015
Detailed Description OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Ultra Logic level (1.8V rated) • Avalanche r...
Datasheet PDF File BSS806N PDF File

BSS806N
BSS806N

Overview
OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Ultra Logic level (1.
8V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSS806N Product Summary V DS R DS(on),max ID V GS=2.
5 V V GS=1.
8 V 20 V 57 mΩ 82 2.
3 A PG-SOT23 3 1 2 Type BSS806N Package SOT23 Tape and Reel Information H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking YEs Avalanche energy, single pulse E AS I D=2.
3 A, R GS=25 Ω Reverse diode dv /dt Gate source voltage Power dissipation1) Operating and storage temperature ESD Class dv /dt I D=2.
3 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C V GS P tot T A=25 °C T j, T stg JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 Lead Free Yes Packing Non dry Value 2.
3 1.
9...


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