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IPB107N20NA

Part Number	IPB107N20NA
Manufacturer	Infineon
Description	Power-Transistor
Published	Dec 15, 2016
Detailed Description	IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(o...
Datasheet	IPB107N20NA PDF File

Overview

IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type IPB107N20NA IPP110N20NA 200 V 10.
7 mW 88 A Package Marking PG-TO263-3 107N20NA PG-TO220-3 110N20NA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current1) ID I D,pulse T C...

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