DatasheetsPDF.com

IPB107N20NA

Part Number	IPB107N20NA
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 5, 2020
Detailed Description	Isc N-Channel MOSFET Transistor IPB107N20NA ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate char...
Datasheet	IPB107N20NA PDF File

Overview

Isc N-Channel MOSFET Transistor IPB107N20NA ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 88 63 352 PD Total Dissipation @TC=25℃ 300 Tch Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) ...

Similar Datasheet

IPB107N20N3 Power-Transistor - Infineon
IPB107N20N3 N-Channel MOSFET - INCHANGE
IPB107N20N3G Power-Transistor - Infineon Technologies
IPB107N20NA Power-Transistor - Infineon
IPB107N20NA N-Channel MOSFET - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)