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BSC042N03SG

Infineon
Part Number BSC042N03SG
Manufacturer Infineon
Description Power-Transistor
Published Dec 16, 2016
Detailed Description OptiMOS™2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converter...
Datasheet PDF File BSC042N03SG PDF File

BSC042N03SG
BSC042N03SG

Overview
OptiMOS™2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • Logic level / N-channel • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated; dv/dt rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC042N03S G Product Summary V DS R DS(on),max ID 30 V 4.
2 mΩ 95 A PG-TDSON-8 Type BSC042N03S G Package PG-TDSON-8 Marking 42N03S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W2) Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt I D,pulse E AS dv /dt T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Power dissipation ...


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