DatasheetsPDF.com

IRFI1310NPBF

Infineon
Part Number IRFI1310NPBF
Manufacturer Infineon
Description Power MOSFET
Published Dec 21, 2016
Detailed Description  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4...
Datasheet PDF File IRFI1310NPBF PDF File

IRFI1310NPBF
IRFI1310NPBF


Overview
 Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.
5KVRMS   Sink to Lead Creepage Dist.
= 4.
8mm  Fully Avalanche Rated  Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
IRFI1310NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 100V 0.
036 24A G Gate S D G TO-220 Full-Pak D Drain S Source Base Part Number IRFI1310NPbF Package Type TO-220 Full-Pak Standard Pack Form Quantity Tube 50 Orderable Part Number IRFI1310NPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Max.
24 17 140 56 0.
37 ± 20 420 22 5.
6 5.
0 -55 to + 175 300 10 lbf•in (1.
1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Symbol RJC Junction-to-Case RJA Juncti...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)