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IRFI1310NPBF

International Rectifier
Part Number IRFI1310NPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 24, 2016
Detailed Description l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4...
Datasheet PDF File IRFI1310NPBF PDF File

IRFI1310NPBF
IRFI1310NPBF

Overview
l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.
5KVRMS … l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚† Avalanche Current† Repetitive Avalanche Energy Peak Diode Recovery dv/dtƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient G PD - 94873 IRFI1310NPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.
036Ω S ID = 24A TO-220 FULLPAK Max.
24 17 140 56 0.
37 ± 20 420 22 5.
6 5.
0 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Typ.
––– ––– Max.
2.
7 65 Units A W W/°C V mJ A mJ V/ns °C Units °C/W 12/9/03 IRFI1310NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter ...


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