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IPP020N06N

Infineon
Part Number IPP020N06N
Manufacturer Infineon
Description Power-Transistor
Published Dec 27, 2016
Detailed Description Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested ...
Datasheet PDF File IPP020N06N PDF File

IPP020N06N
IPP020N06N

Overview
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.
g.
sync.
rec.
• 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 IPP020N06N Product Summary VDS RDS(on),max ID QOSS QG(0V.
.
10V) 60 V 2.
0 mW 120 A 119 nC 106 nC PG-TO220-3 Type IPP020N06N Package PG-TO220-3 Marking 020N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 120 A 120 V GS=10 V, T C=25 °C, R thJA =50K/W 29 Pulsed drain current2) I D,pulse T C=25 °C 480 Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W 420 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x...


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