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IPP020N06N

INCHANGE
Part Number IPP020N06N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 30, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP020N06N，IIPP020N06N ·FEATURES ·Static drain-source on-resist...
Datasheet PDF File IPP020N06N PDF File

IPP020N06N
IPP020N06N

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP020N06N，IIPP020N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.
0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 480 PD Total Dissipation @TC=25℃ 214 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·TH...


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