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3DD13003F

Part Number	3DD13003F
Manufacturer	JCET
Description	NPN Transistor
Published	Jan 8, 2017
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 3DD13003F TRANSISTOR ( NPN )...
Datasheet	3DD13003F PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-220F Plastic-Encapsulate Transistors 3DD13003F TRANSISTOR ( NPN ) TO-220F FEATURE Power Switching Applications MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit 1.
BASE 2.
COLLECTOR 123 VCBO VCEO VEBO IC PC RθJA TJ, Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal Resistance from Junction to Ambient Junction and Storage Temperature 700 V 400 V 9V 1.
5 A 2W 62.
5 ℃/W -55~+150 ℃ 3.
EMITTER ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collect...

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