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3DD13003B

Part Number	3DD13003B
Manufacturer	JIANGSU CHANGJIANG
Description	NPN Transistor
Published	Aug 1, 2015
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003B TRANSISTOR( NPN ) F...
Datasheet	3DD13003B PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-92 Plastic-Encapsulate Transistors 3DD13003B TRANSISTOR( NPN ) FEATURES · power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 700 400 9 1.
5 0.
9 150 -55-150 Units V V V A W ℃ ℃ TO-92 1.
EMITTER 2.
COLLECTOR 3.
BASE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) 123 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown volt...

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