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3DD13003

GME
Part Number 3DD13003
Manufacturer GME
Description High Voltage Fast Switching NPN Power Transistor
Published May 17, 2018
Detailed Description Production specification High Voltage Fast Switching NPN Power Transistor 3DD13003 FEATURES  PC=1W(Mounted on ceramic...
Datasheet PDF File 3DD13003 PDF File

3DD13003
3DD13003

Overview
Production specification High Voltage Fast Switching NPN Power Transistor 3DD13003 FEATURES  PC=1W(Mounted on ceramic substrate).
 High speed switching.
 Die size:1.
34*1.
34  Small flat package.
Pb Lead-free APPLICATIONS  Mainly used for compact electronic energy saving lamps, electronic ballast and mobile phone chargers power switch circuit ORDERING INFORMATION Type No.
Marking 3DD13003 13003 SOT-89S Package Code SOT-89S MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 600 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 9 IC Collector Current -Continuous 1.
3 PC Collector Dissipation 0.
5 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A W ℃ Z001 Rev.
A www.
gmesemi.
com 1 Production specification High Voltage Fast Switching NPN Power Transistor 3DD13003 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions M...


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