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FDMC89521L

Fairchild Semiconductor
Part Number FDMC89521L
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMC89521L Dual N-Channel PowerTrench® MOSFET August 2016 FDMC89521L Dual N-Channel PowerTrench® MOSFET 60 V, 8.2 A, 1...
Datasheet PDF File FDMC89521L PDF File

FDMC89521L
FDMC89521L

Overview
FDMC89521L Dual N-Channel PowerTrench® MOSFET August 2016 FDMC89521L Dual N-Channel PowerTrench® MOSFET 60 V, 8.
2 A, 17 mΩ Features General Description „ Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 8.
2 A „ Max rDS(on) = 27 mΩ at VGS = 4.
5 V, ID = 6.
7 A „ Termination is Lead-free „ RoHS Compliant This device includes two 60 V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package.
The package is enhanced for exceptional thermal performance.
Applications „ Battery Protection „ Load Switching „ Bridge Topologies Pin 1 G1 S1 S1 S1 D1 D2 G2 S2 S2 S2 Power 33 G1 S1 S1 S1 G2 S2 S2 S2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics ) (Note 1a) (Note...


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