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FDMC89521L

ON Semiconductor
Part Number FDMC89521L
Manufacturer ON Semiconductor
Description Dual N-Channel MOSFET
Published Dec 19, 2023
Detailed Description MOSFET – Dual N-Channel, POWERTRENCH) 60 V, 8.2 A, 17 mW FDMC89521L General Description This device includes two 60 V N−...
Datasheet PDF File FDMC89521L PDF File

FDMC89521L
FDMC89521L

Overview
MOSFET – Dual N-Channel, POWERTRENCH) 60 V, 8.
2 A, 17 mW FDMC89521L General Description This device includes two 60 V N−Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package.
The package is enhanced for exceptional thermal performance.
Features • Max rDS(on) = 17 mW at VGS = 10 V, ID = 8.
2 A • Max rDS(on) = 27 mW at VGS = 4.
5 V, ID = 6.
7 A • Termination is Lead−free • These Devices are RoHS Compliant Applications • Battery Protection • Load Switching • Bridge Topologies MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current A − Continuous TA = 25°C (Note 1a) 8.
2 − Pulsed 40 EAS Single Pulse Avalanche Energy (Note 3) 32 mJ PD Power Dissipation TC = 25°C 16 W Power Dissipation TA = 25°C (Note 1a) 1.
9 TJ, TSTG Operating and Storage Junction Temperature Range −55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may ...


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