DatasheetsPDF.com

FDMS86200DC

ON Semiconductor
Part Number FDMS86200DC
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jan 11, 2020
Detailed Description MOSFET POWERTRENCH), N-Channel, DUAL COOL), Shielded Gate 150 V, 40 A, 17mW FDMS86200DC General Description This N−Chan...
Datasheet PDF File FDMS86200DC PDF File

FDMS86200DC
FDMS86200DC

Overview
MOSFET POWERTRENCH), N-Channel, DUAL COOL), Shielded Gate 150 V, 40 A, 17mW FDMS86200DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.
Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.
Features • Shielded Gate MOSFET Technology • DUAL COOL® Top Side Cooling DFN8 Package • Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.
3 A • Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.
8 A • High Performance Technology for Extremely Low rDS(on) • 100% UIL Tested • RoHS Compliant Applications • Primary MOSFET in DC − DC Converters • Secondary Synchronous Rectifier • Load Switch MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 150 V VGS Gate to Source Voltage ±20 V ID Drain Current: A Continuous, TC = 25°C 40 Continuous, TA = 25°C (Note 1a) 9.
3 Pulsed (Note 4) 100 EAS Single Pulse Avalanche Energy (Note 3) 294 mJ PD TJ, TSTG Power Dissipation: TC = 25°C TA = 25°C (Note 1a) Operating and Storage Junction Temperature Range W 125 3.
2 −55 to +150 °C DATA SHEET www.
onsemi.
com ELECTRICAL CONNECTION S D S D S D G D N-Channel MOSFET Pin 1 DDDD GSS S Pin 1 Top Bottom DFN8, DUAL COOL® CASE 506EG MARKING DIAGRAM ÉÉÉÉ2ÉÉÉÉJAYÉÉÉÉWZ 2J = Specific Device Code A = Assembly Location Y = Year W = Work Week Z = Assembly Lot Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016 1 January, 2023 − Rev.
6 Publication Order Number: FDMS86200DC/D FDMS86200DC Table 1.
THERMAL CHARACTERISTICS Symbol Characteristic RqJC RqJC RqJA Thermal Resistance, Junction to Case (Top Source) Thermal Resistance, Junction to Case (Bottom Drain) Thermal R...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)