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FDMC8010ET30

Fairchild Semiconductor
Part Number FDMC8010ET30
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMC8010ET30 N-Channel PowerTrench® MOSFET FDMC8010ET30 N-Channel PowerTrench® MOSFET 30 V, 174 A, 1.3 mΩ Features „ Ex...
Datasheet PDF File FDMC8010ET30 PDF File

FDMC8010ET30
FDMC8010ET30


Overview
FDMC8010ET30 N-Channel PowerTrench® MOSFET FDMC8010ET30 N-Channel PowerTrench® MOSFET 30 V, 174 A, 1.
3 mΩ Features „ Extended TJ rating to 175°C „ Max rDS(on) = 1.
3 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 1.
8 mΩ at VGS = 4.
5 V, ID = 25 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant January 2015 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
Applications „ DC - DC Buck Converters „ Point of Load „ High Efficiency Load Switch and Low Side Switching „ Oring FET Pin 1 Pin 1 SS SG S S D D DDDD Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parame...


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