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FDMC8010ET30

ON Semiconductor
Part Number FDMC8010ET30
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 19, 2023
Detailed Description FDMC8010ET30 MOSFET – N-Channel, POWERTRENCH) 30 V, 174 A, 1.3 mW General Description This N−Channel MOSFET is produce...
Datasheet PDF File FDMC8010ET30 PDF File

FDMC8010ET30
FDMC8010ET30

Overview
FDMC8010ET30 MOSFET – N-Channel, POWERTRENCH) 30 V, 174 A, 1.
3 mW General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance.
This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
Features • Extended TJ Rating to 175°C • Max rDS(on) = 1.
3 mW at VGS = 10 V, ID = 30 A • Max rDS(on) = 1.
8 mW at VGS = 4.
5 V, ID = 25 A • High Performance Technology for Extremely Low rDS(on) • These Devices are Pb−Free and are RoHS Compliant Applications • DC − DC Buck Converters • Point of Load • High Efficiency Load Switch and Low Side Switching • Oring FET MOSFET MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Volage (Note 4) ±20 V ID Drain Current −Continuous −Continuous −Continuous −Pulsed TC = 25°C (Note 6) TC = 100°C (Note 6) TA = 25°C (Note 1a) (Note 5) A 174 123 30 835 EAS Single Pulse Avalance Energy (Note 3) 153 mJ PD Power Dissipation TC = 25°C 65 W Power Dissipation TA = 25°C (Note 1a) 2.
8 TJ, TSTG Operating and Storage Junction Temperature −55 to °C Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Symbol Parameter RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1a) Ratings 1.
3 53 Unit °C/W °C/W www.
onsemi.
com Pin 1 Pin 1 SS SG DDDD Top Bottom PQFN8 3.
3x3.
3, 0.
65P CASE 483AW Power 33 MARKING DIAGRAM $Y&Z&3&K FDMC 8010ET $Y &Z &3 &K FDMC8010ET = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code S D S D S D G D ORDERING INFORMATION See de...


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