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FDT86106LZ

Fairchild Semiconductor
Part Number FDT86106LZ
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDT86106LZ N-Channel PowerTrench® MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET 100 V, 3.2 A, 108 mΩ Features Gen...
Datasheet PDF File FDT86106LZ PDF File

FDT86106LZ
FDT86106LZ

Overview
FDT86106LZ N-Channel PowerTrench® MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET 100 V, 3.
2 A, 108 mΩ Features General Description January 2013 „ Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.
2 A „ Max rDS(on) = 153 mΩ at VGS = 4.
5 V, ID = 2.
7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ HBM ESD protection level > 3 KV typical (Note 4) „ 100% UIL tested This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance.
G-S z...


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