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FDT86106LZ

ON Semiconductor
Part Number FDT86106LZ
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description MOSFET – N-Channel, POWERTRENCH) 100 V, 3.2 A, 108 mW FDT86106LZ General Description This N−Channel logic Level MOSFETs...
Datasheet PDF File FDT86106LZ PDF File

FDT86106LZ
FDT86106LZ

Overview
MOSFET – N-Channel, POWERTRENCH) 100 V, 3.
2 A, 108 mW FDT86106LZ General Description This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching performance.
G−S zener has been added to enhance ESD voltage level.
Features  Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.
2 A  Max rDS(on) = 153 mW at VGS = 4.
5 V, ID = 2.
7 A  High Performance Trench Technology for Extremely Low rDS(on)  High Power and Current Handling Capability in a Widely Used Surface Mount Package  HBM ESD Protection Level > 3 kV Typical (Note 4)  100% UIL Tested  This Device is Pb−Free, H...


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