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FQAF11N90C

Fairchild Semiconductor
Part Number FQAF11N90C
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 16, 2017
Detailed Description FQAF11N90C — N-Channel QFET® MOSFET FQAF11N90C N-Channel QFET® MOSFET 900 V, 7.0 A, 1.1 Ω December 2013 Description T...
Datasheet PDF File FQAF11N90C PDF File

FQAF11N90C
FQAF11N90C

Overview
FQAF11N90C — N-Channel QFET® MOSFET FQAF11N90C N-Channel QFET® MOSFET 900 V, 7.
0 A, 1.
1 Ω December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 7.
0 A, 900 V, RDS(on) = 1.
1 Ω (Max.
) @ VGS = 10 V, ID = 3.
5 A • Low Gate Charge (Typ.
60 nC) • Low Crss (Typ.
23 pF) • 100% Avalan...


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