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P6015AT

UNIKC
Part Number P6015AT
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 1, 2017
Detailed Description P6015AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 60mΩ @VGS = 10V ID 26A TO-220 AB...
Datasheet PDF File P6015AT PDF File

P6015AT
P6015AT

Overview
P6015AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 60mΩ @VGS = 10V ID 26A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 26 16 80 Avalanche Current IAS 21 Avalanche Energy L = 0.
1mH EAS 22 Power Dissipation TC = 25 °C TC = 100 °C PD 104 41 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.
2 °C / W REV 1.
0 1 2014/11/18 P6015AT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(B...


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