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PB210BM

UNIKC
Part Number PB210BM
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 2, 2017
Detailed Description PB210BM N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 1.3A SOT-23 ...
Datasheet PDF File PB210BM PDF File

PB210BM
PB210BM

Overview
PB210BM N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 1.
3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C ID IDM 1.
3 0.
8 18 Avalanche Current IAS 18 Avalanche Energy L = 0.
1mH EAS 16.
5 Power Dissipation TA = 25 °C TA = 70 °C PD 0.
75 0.
3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA RqJC TYPICAL MAXIMUM 166 60 UNITS °C / W Rev 1.
1 1 2016/8/1 PB210BM N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Thresh...


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