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PB210BI

Part Number	PB210BI
Manufacturer	UNIKC
Description	MOSFET
Published	Feb 6, 2017
Detailed Description	PB210BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 9A TO-251 AB...
Datasheet	PB210BI PDF File

Overview

PB210BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 230mΩ @VGS = 10V ID 9A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 9 6 14 Avalanche Current IAS 16 Avalanche Energy L = 0.
1 mH EAS 14 Power Dissipation TC = 25 °C TC = 100 °C PD 36 14 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperatu...

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