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P5102FMA

UNIKC
Part Number P5102FMA
Manufacturer UNIKC
Description P-Channel MOSFET
Published Feb 2, 2017
Detailed Description P5102FMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 45mΩ @VGS = -4.5V ID -3.5A SOT-2...
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P5102FMA
P5102FMA

Overview
P5102FMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 45mΩ @VGS = -4.
5V ID -3.
5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3.
5 -2.
8 -21 Power Dissipation TA = 25 °C TA = 70 °C PD 1.
0 0.
6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1limited by maximum junction temperature.
SYMBOL RqJA RqJC TYPICAL MAXIMUM 120 60 UNITS °C / W REV 1.
2 1 2016/5/13 P5102FMA P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS...


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