DatasheetsPDF.com

P5102FM6

UNIKC
Part Number P5102FM6
Manufacturer UNIKC
Description P-Channel MOSFET
Published Feb 3, 2017
Detailed Description P5102FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 51mΩ @VGS = -4.5V ID -4.2A SOT-2...
Datasheet PDF File P5102FM6 PDF File

P5102FM6
P5102FM6

Overview
P5102FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 51mΩ @VGS = -4.
5V ID -4.
2A SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -4.
2 -3.
3 -21 Avalanche Current IAS -21 Avalanche Energy L=0.
1mH EAS 22 Power Dissipation TA = 25 °C TA = 70 °C PD 1.
4 0.
9 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Limited by maximum junction temperature.
SYMBOL RqJA TYPICAL MAXIMUM UNITS 85 °C / W Ver 1.
0 1 2012/6/25 P5102FM6 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Ga...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)