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P2103NVG

UNIKC
Part Number P2103NVG
Manufacturer UNIKC
Description N&P-Channel MOSFET
Published Feb 3, 2017
Detailed Description P2103NVG N- & P- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) NChannel PChannel 30 21mΩ @VGS = ...
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P2103NVG
P2103NVG

Overview
P2103NVG N- & P- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) NChannel PChannel 30 21mΩ @VGS = 10V -30 34mΩ @VGS = 10V ID 8A -6A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage SYMBOL VDS N- PChannel Channe 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current TA = 25 °C TA = 70 °C ID 8 -6 6 -5 Pulsed Drain Current1 IDM 36 -27 Avalanche Current IAS 26 -27 Avalanche Energy L =0.
1mH EAS 35 38 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.
3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA TYPICAL MAXIMUM UNITS 62.
5 °C / W REV 1.
0 1 2014-1-17 P2103NVG N- & P- Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDIT...


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